Diodes manufactured from silicon carbide are capable of high temperature operation to 400oC. This could be in a high temperature environment: down hole oil well logging, gas turbine engines, auto engines. Or, operation in a moderate environment at high power dissipation. Nuclear and space applications are promising as SiC is 100 times more resistant to radiation compared with silicon. SiC is a better conductor of heat than any metal. Thus, SiC is better than silicon at conducting away heat. Breakdown voltage is several kV. SiC power devices are expected to reduce electrical energy losses in the power industry by a factor of 100.
Diodes based on organic chemicals have been produced using low temperature processes. Hole rich and electron rich conductive polymers may be ink jet printed in layers. Most of the research and development is of the organic LED (OLED). However, development of inexpensive printable organic RFID (radio frequency identification) tags is on going. In this effort, a pentacene organic rectifier has been operated at 50 MHz. Rectification to 800 MHz is a development goal. An inexpensive metal insulator metal (MIM) diode acting like a back-to-back zener diode clipper has been delveloped. Also, a tunnel diode like device has been fabricated.